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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-220F package Low saturation voltage. Excellent dependence of hFE on current. Fast switching speed. APPLICATIONS Car-use inductance drivers, lamp drivers. Inverters drivers, conveters (strobes, flashes, FLT lighting circuits). Power amplifiers High-speed switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION
2SC3748
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM
IN
Emitter

PARAMETER
Fig.1 simplified outline (TO-220F) and symbol
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak
CHA
E SEM NG
Open base
OND IC
CONDITIONS
TOR UC
VALUE 80 60 5 10 12 2
UNIT V V V A A
Open emitter
Open collector
PC
Collector dissipation TC=25ae 30 150 -55~150 ae ae
W
Tj Tstg
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3748
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=1mA; IE=0 IC=1mA; RBE= IE=1mA; IC=0 IC=5A; IB=0.25A VCB=40V ;IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=1A ; VCE=5V 70 100 MIN 80 60 5 0.4 100 100 280 MHz |I |I TYP. MAX UNIT V V V V A A
SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT
Switching times ton tstg tf
Fall time
Turn-on time

CHA IN
Storage time
E SEM NG
VCC=20V; IC=5A IB1=-IB2=0.25A RL=4|
OND IC
TOR UC
0.1 0.5 0.1
|I |I |I
s s s
hFE Classifications Q 70-140 R 100-200 S 140-280
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3748

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3748

CHA IN
E SEM NG
OND IC
TOR UC
4


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